The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 20, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Yoonho Son, Yongin-si, KR;
Mongsup Lee, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/3213 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32133 (2013.01); H01L 21/76801 (2013.01); H01L 21/76877 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01);
Abstract
A semiconductor device includes a device isolation pattern on a substrate to define active patterns, a gate electrode crossing the active patterns, first and second impurity regions in each of the active patterns and on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region to the bit line, and a second contact electrically connected to the second impurity region. The second contact includes a vertically-extended portion covering an upper side surface of the second impurity region.