The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 15, 2014
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Sang Gon Lee, Seoul, KR;
Sun Joo Park, Seoul, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/66545 (2013.01);
Abstract
A dummy active region is formed in a region in which a gate contact for supplying operation power to the buried gate is formed, and a PN junction diode connected to the gate contact in a reverse bias direction is formed in the dummy active region. Current leakage, in which current flows out toward a substrate, is prevented even when misalignment of the gate contact occurs.