The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Aug. 17, 2015
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Hiroyuki Kunishima, Tokyo, JP;

Yasutaka Nakashiba, Tokyo, JP;

Masaru Wakabayashi, Tokyo, JP;

Shinichi Watanuki, Tokyo, JP;

Ken Ozawa, Tokyo, JP;

Tatsuya Usami, Tokyo, JP;

Yoshiaki Yamamoto, Tokyo, JP;

Keiji Sakamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 23/60 (2006.01); G02F 1/01 (2006.01); G02F 1/025 (2006.01); H01L 31/02 (2006.01); H05K 1/02 (2006.01); G02B 6/43 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); G02F 1/0121 (2013.01); G02F 1/025 (2013.01); H01L 31/02002 (2013.01); H05K 1/0296 (2013.01); G02B 6/43 (2013.01); G02F 2201/12 (2013.01); G02F 2202/105 (2013.01);
Abstract

A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device. In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.


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