The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 21, 2014
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Qiuhua Han, Shanghai, CN;
Abstract
Various embodiments provide FinFETs and methods for forming the same. In an exemplary method, a semiconductor substrate having sacrificial layers formed thereon is provided. First sidewall spacers and second sidewall spacers are sequentially formed on both sides of each sacrificial layer. The sacrificial layers can be removed. A first width is measured as a distance between adjacent first sidewall spacers, and a second width is measured as a distance between adjacent second sidewall spacers. When the first width is not equal to the second width, the first sidewall spacers or the second sidewall spacers are correspondingly etched such that the first width is equal to the second width. The semiconductor substrate is etched using the first sidewall spacers and the second sidewall spacers as an etch mask, to form fins, such that a top of each fin has a symmetrical morphology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile