The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Sep. 24, 2014
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Koei Kuribayashi, Toyama, JP;
Shinya Ebata, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 16/401 (2013.01); C23C 16/45527 (2013.01); C23C 16/45546 (2013.01); H01J 37/32926 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01);
Abstract
The method of the present invention is related to a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. The method of the present invention includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.