The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 31, 2011
Applicant:
Hsiu-ying Cho, Hsinchu, TW;
Inventor:
Hsiu-Ying Cho, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 5/00 (2006.01); H01F 27/28 (2006.01); H01F 17/00 (2006.01);
U.S. Cl.
CPC ...
H01F 17/0013 (2013.01); H01F 2017/008 (2013.01); H01F 2017/0073 (2013.01); H01F 2017/0086 (2013.01);
Abstract
A vertical inductor structure in a semiconductor device includes a plurality of vertically oriented spirals that produce magnetic field in a dielectric material above the surface of a semiconductor substrate thereby preventing any eddy currents from propagating in the substrate. An inductor shield structure is also provided. The inductor shield structure is formed over the substrate surface and between an inductor such as the vertical inductor structure or other inductor types and also prevents eddy currents from being induced in the substrate. The inductor shield may surround the inductor to various degrees.