The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Sep. 02, 2015
Applicant:
Ememory Technology Inc., Hsinchu, TW;
Inventor:
Te-Hsun Hsu, Hsinchu County, TW;
Assignee:
eMemory Technology Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); H01L 27/115 (2006.01); H01L 29/78 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 17/16 (2006.01); H01L 29/10 (2006.01); H01L 23/525 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 27/112 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 16/0408 (2013.01); G11C 16/14 (2013.01); G11C 17/16 (2013.01); H01L 23/5256 (2013.01); H01L 27/10897 (2013.01); H01L 27/1116 (2013.01); H01L 27/1156 (2013.01); H01L 27/11206 (2013.01); H01L 27/11524 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/78 (2013.01); H01L 29/868 (2013.01); H01L 29/8611 (2013.01); G11C 29/785 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A non-volatile memory including a substrate, a floating gate transistor, a select transistor and a stress-releasing transistor. The floating gate transistor, the select transistor and the stress-releasing transistor are disposed on the substrate and coupled in series with each other. The stress-releasing transistor is located between the floating gate transistor and the select transistor.