The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

May. 04, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Yi Ho, Hsinchu, TW;

Hsiang-Lan Lung, Hsinchu, TW;

Wei-Chih Chien, Hsinchu, TW;

Tu-Shun Chen, Hsinchu, TW;

Chia-Jung Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1076 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0683 (2013.01);
Abstract

A memory device and an operation method thereof are provided, and the operation method of the memory device includes following steps. A programming operation is performed to write an original data into a first memory array in the memory device. The original data in the first memory array is verified, and whether to generate a write signal is determined according to a verification result. An error correction code is generated according to the original data, and the error correction code and a write address are stored temporarily in a buffer circuit of the memory device. When the write signal is generated, the error correction code and the write address in the buffer circuit are written into a second memory array in the memory device.


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