The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jan. 17, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Won-Joon Choi, Icheon-Si, KR;
Ki-Seon Park, Icheon-Si, KR;
Cha-Deok Dong, Icheon-Si, KR;
Bo-Mi Lee, Icheon-Si, KR;
Guk-Cheon Kim, Icheon-Si, KR;
Seung-Mo Noh, Icheon-Si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); G11C 11/1659 (2013.01);
Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.