The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Aug. 06, 2015
Excelliance Mos Corporation, Hsinchu County, TW;
Chu-Kuang Liu, Hsinchu County, TW;
Excelliance MOS Corporation, Hsinchu County, TW;
Abstract
An edge terminal structure of a trench power semiconductor device includes a first conductive-type substrate, a first conductive-type epitaxial layer thereon, a first electrode on a surface of the first conductive-type epitaxial layer, a second electrode on a back of the first conductive-type substrate, a first and a second field plates. The trench power semiconductor device includes an active area and an edge terminal area. A trench is in the surface of the first conductive-type epitaxial layer. The first field plate includes an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.