The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Mar. 16, 2015
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Chiao Tung University, Hsinchu, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Chiao Tung University, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/0206 (2013.01); H01L 21/0257 (2013.01); H01L 21/02274 (2013.01); H01L 21/02623 (2013.01); H01L 21/02631 (2013.01); H01L 21/02636 (2013.01); H01L 21/308 (2013.01); H01L 29/0653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66568 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01); H01L 29/7851 (2013.01);
Abstract
Semiconductor devices and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a semiconductor device may include: patterning a substrate to have a first region and a second region extending from the first region of the substrate; depositing an isolation layer over a surface of the first region of the substrate; and epitaxially forming source/drain regions over the isolation layer and adjacent to sidewalls of the second region of the substrate.