The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Aug. 17, 2015
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Eddy Kunnen, Kessel-Lo, BE;

Vasile Paraschiv, Kessel-Lo, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); C01B 35/06 (2006.01); C09K 13/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); C01B 35/061 (2013.01); C09K 13/00 (2013.01); H01L 21/31116 (2013.01); H01L 21/76897 (2013.01);
Abstract

A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure.


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