The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Nov. 05, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Alexandros T. Demos, Fremont, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01);
Abstract

Implementations described herein generally relate to methods for depositing etch stop layers, such as AlN layers, using UV assisted CVD. Methods disclosed herein generally include positioning a substrate in a process region of a process chamber; delivering an aluminum-containing precursor to the process region, the aluminum-containing precursor depositing an aluminum species onto the substrate; purging the process region of aluminum-containing precursor using an inert gas; delivering a UV responsive nitrogen-containing precursor to the process region, the UV responsive nitrogen-containing gas being activated using UV radiation to create nitrogen radicals, the nitrogen radicals reacting with the aluminum species to form an AlN layer; and purging the process region of UV responsive nitrogen-containing precursor using an inert gas.


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