The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Nov. 05, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jhen-Cyuan Li, New Taipei, TW;
Shui-Yen Lu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/02057 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure.