The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Apr. 03, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01J 37/32091 (2013.01); H01L 21/0234 (2013.01); H01L 21/67069 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract
Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.