The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
May. 29, 2015
Micron Technology, Inc., Boise, ID (US);
Vishal Sarin, Cupertino, CA (US);
Allahyar Vahidimowlavi, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programming the first memory cell to the first level. After programming the first memory cell to the first level, the second memory cell is programmed to the second level using a second set of program pulses within a second programming voltage range, where the first programming voltage range overlaps the second programming voltage range. The first memory cell that is programmed to the first level is inhibited while programming the second memory cell to the second level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile