The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Feb. 18, 2013
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Atsushi Kamino, Tokyo, JP;

Hisayuki Takasu, Tokyo, JP;

Hirobumi Muto, Tokyo, JP;

Toru Iwaya, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/30 (2006.01); G01N 1/32 (2006.01); H01J 37/305 (2006.01); H01J 37/20 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
C23C 14/30 (2013.01); G01N 1/32 (2013.01); H01J 37/20 (2013.01); H01J 37/30 (2013.01); H01J 37/3053 (2013.01); H01J 37/3056 (2013.01); H01J 2237/317 (2013.01); H01J 2237/31745 (2013.01); H01J 2237/31749 (2013.01); H01J 2237/334 (2013.01);
Abstract

The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.


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