The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jun. 14, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Li-Che Chen, Pingtung County, TW;
Te-Yuan Wu, Hsinchu, TW;
Chia-Huei Lin, New Taipei, TW;
Hui-Min Wu, Hsinchu County, TW;
Kun-Che Hsieh, Tainan, TW;
Kuan-Yu Wang, New Taipei, TW;
Chung-Yi Chiu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a MEMS structure, in which an etch stop layer is formed to be buried within the inter-dielectric layer and, during an etch of the substrate and the inter-dielectric layer from backside to form a chamber, the etch stop layer protect the remaining inter-dielectric layer. The chamber thus formed has an opening at a backside of the substrate, a ceiling opposite to the opening, and a sidewall joining the ceiling. The sidewall may further include a portion of the etch stop layer.