The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Aug. 10, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Yosuke Akimoto, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hideyuki Tomizawa, Kanagawa-ken, JP;
Masanobu Ando, Fukuoka-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Gen Watari, Fukuoka-ken, JP;
Naoya Ushiyama, Fukuoka-ken, JP;
Tetsuro Komatsu, Fukuoka-ken, JP;
Miyoko Shimada, Kanagawa-ken, JP;
Hideto Furuyama, Kanagawa-ken, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.