The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Dec. 08, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Ming Hsu, Changhua County, TW;

Chun-Liang Kuo, Kaohsiung, TW;

Tsang-Hsuan Wang, Kaohsiung, TW;

Sheng-Hsu Liu, Changhua County, TW;

Chieh-Lung Wu, Kaohsiung, TW;

Chung-Min Tsai, Tainan, TW;

Yi-Wei Chen, Taichung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/0847 (2013.01); H01L 29/24 (2013.01); H01L 29/66636 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.


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