The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Sep. 11, 2013
United Microelectronics Corporation, Hsinchu, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A vertical transistor device comprises a substrate, a first source, a drain, a first gate dielectric layer, a first gate electrode and a first doping region. The substrate has at least one protruding portion. The first source having a first conductivity type is formed on the substrate. The drain having the first conductivity type is disposed on the protruding portion. The first gate electrode is disposed adjacent to a first sidewall of the protruding portion. The first gate dielectric layer is disposed between the first gate electrode and the first sidewall as well as being disposed adjacent to the first source and the drain. The first doping region having a second conductivity type is formed beneath the protruding portion and adjacent to the first source.