The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Dec. 17, 2012
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Mongsup Lee, Seoul, KR;
Yoonho Son, Yongin-si, KR;
Woogwan Shim, Yongin-si, KR;
Chan Min Lee, Hwaseong-si, KR;
Inseak Hwang, Suwon-si, KR;
SAMSUNG ELECTTONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor device may include a substrate including an active pattern delimited by a device isolation pattern, a gate electrode crossing the active pattern, a first impurity region and a second impurity region in the active pattern on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region with the bit line, and a first nitride pattern on a lower side surface of the first contact. A width of the first contact measured perpendicular to an extending direction of the bit line may be substantially equal to that of the bit line.