The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jun. 23, 2015
Globalfoundries Inc., Grand Cayman, KY;
Renata Camillo-Castillo, Essex Junction, VT (US);
Peng Cheng, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
John J. Pekarik, Underhill, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An intrinsic base layer is formed on a semiconductor substrate, an etch stop layer is formed on the intrinsic base layer, and an extrinsic base layer is formed on the etch stop layer. A trench is formed that penetrates through the extrinsic base layer to the etch stop layer. The trench is formed by etching the extrinsic base layer selective to the etch stop layer. The first trench is extended through the etch stop layer to the intrinsic base layer by etching the etch stop layer selective to the intrinsic base layer. After the trench is extended through the etch stop layer, an emitter is formed using the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile