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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496222 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Feb. 06, 2014

Semiconductor device including insulating films with different moisture resistances and fabrication method thereof

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Junichi Kon, Isehara, JP;

Yoshihiro Nakata, Atsugi, JP;

Kozo Makiyama, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Fujitsu Patent Center

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/0272 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/0331 (2013.01); H01L 21/28587 (2013.01); H01L 23/5222 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device has a structure including a substrate, a first insulating film formed over a part of a principal plane of the substrate, a conductive portion formed over a surface of the first insulating film, and a second insulating film which covers the principal plane of the substrate, the first insulating film, and the conductive portion and whose moisture resistance is higher than moisture resistance of the first insulating film. The first insulating film is placed between the substrate and the conductive portion to prevent the generation of parasitic capacitance. The first insulating film is covered with the second insulating film whose moisture resistance is higher than the moisture resistance of the first insulating film. The second insulating film prevents the first insulating film from absorbing moisture.

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