The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Sep. 26, 2014
Clemson University, Clemson, SC (US);
Joseph W. Kolis, Central, SC (US);
Colin D. McMillen, Liberty, SC (US);
J. Matthew Mann, Anderson, SC (US);
Clemson University Research Foundation, Clemson, SC (US);
Abstract
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a vanadate-based activator region and a vanadate-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing layers on a host. A YVOhost material can be doped in one region with a suitable active lasing ion and can be formed with another region that is doped with a saturable absorber. Regions can be formed with controlled thickness. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.