The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
May. 02, 2016
Applicant:
Innovative Micro Technology, Goleta, CA (US);
Inventors:
John Harley, Santa Barbara, CA (US);
Jeffery F. Summers, Santa Barbara, CA (US);
Tao Gilbert, Goleta, CA (US);
Assignee:
Innovative Micro Technology, Goleta, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/02 (2006.01); C23F 4/00 (2006.01); C23F 1/12 (2006.01); H01J 37/32 (2006.01); C23F 1/16 (2006.01); C23F 1/38 (2006.01); C23F 1/44 (2006.01); B81C 1/00 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
C23F 1/02 (2013.01); C23F 1/12 (2013.01); C23F 4/00 (2013.01); H01J 37/32009 (2013.01); B81C 1/00531 (2013.01); B81C 1/00539 (2013.01); C23F 1/16 (2013.01); C23F 1/38 (2013.01); C23F 1/44 (2013.01); G03F 7/0041 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.