The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Aug. 11, 2015
Applicant:

Ebara Corporation, Tokyo, JP;

Inventors:

Yu Ishii, Tokyo, JP;

Hiroyuki Kawasaki, Tokyo, JP;

Masayuki Nakanishi, Tokyo, JP;

Kenya Ito, Tokyo, JP;

Kenji Kodera, Tokyo, JP;

Michiyoshi Yamashita, Tokyo, JP;

Assignee:

Ebara Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 9/00 (2006.01); B24D 11/00 (2006.01); B24B 21/00 (2006.01); B24B 21/08 (2006.01); B24B 21/18 (2006.01); B24B 27/00 (2006.01); B24B 49/12 (2006.01); B24B 9/06 (2006.01); H01L 21/304 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
B24D 11/001 (2013.01); B24B 9/065 (2013.01); B24B 21/002 (2013.01); B24B 21/004 (2013.01); B24B 21/008 (2013.01); B24B 21/08 (2013.01); B24B 21/18 (2013.01); B24B 27/0076 (2013.01); B24B 49/12 (2013.01); H01L 21/304 (2013.01); H01L 21/3105 (2013.01);
Abstract

There is disclosed a method of polishing a peripheral portion of a wafer having a hard film with use of an abrasive film while preventing damage to the abrasive film. The polishing method uses an abrasive film including a base film made of polyimide, a binder made of polyimide, and abrasive grains held by the binder. The polishing method includes: rotating a silicon substrate having a surface on which a silicon carbide film is formed; and removing the silicon carbide film from a peripheral portion of the silicon substrate by pressing the abrasive film at a low force against the silicon carbide film on the peripheral portion of the silicon substrate.


Find Patent Forward Citations

Loading…