The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Mar. 25, 2010
Hisanori Suzuki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Kentaro Maeta, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Kentaro Maeta, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
In a solid-state imaging device, an overflow gate (OFG)has a predetermined electric resistance value, while voltage application unitstoare electrically connected to the OFGat connecting partsto. Therefore, when voltage values Vto Vapplied to the connecting partstoby the voltage application unitstoare adjusted, the OFGcan yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion unitscan be caused to flow out to an overflow drain (OFD), whereby only the electric charges generated in a later stage side region of the photoelectric conversion unitscan be TDI-transferred.