The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Apr. 23, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chia-Fu Hsu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/46 (2006.01); H01L 21/84 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/02565 (2013.01); H01L 21/02664 (2013.01); H01L 21/46 (2013.01); H01L 21/84 (2013.01); H01L 29/24 (2013.01); H01L 29/66477 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate having a metal-oxide semiconductor (MOS) transistor thereon, and an oxide semiconductor transistor adjacent to the MOS transistor. Preferably, the MOS transistor includes a first gate structure and a source/drain region adjacent to two sides of the gate structure, and the oxide semiconductor transistor includes a channel layer and the top surface of the channel layer is lower than the top surface of the first gate structure of the MOS transistor.