The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Oct. 29, 2014
Applicant:
Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Ji Yeon Kim, Suwon-si, KR;
Kyoung Ku Kang, Suwon-si, KR;
Kyoung Soo Park, Suwon-si, KR;
Byeong Geun Son, Suwon-si, KR;
Young Ju Shin, Suwon-si, KR;
Kwang Jin Jung, Suwon-si, KR;
Ja Young Hwang, Suwon-si, KR;
Assignee:
Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C09J 163/00 (2006.01); H05K 3/32 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); C09J 163/00 (2013.01); H01L 24/27 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H05K 3/323 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/271 (2013.01); H01L 2224/27003 (2013.01); H01L 2224/293 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/2939 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29344 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/29439 (2013.01); H01L 2224/29444 (2013.01); H01L 2224/29455 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81903 (2013.01); H01L 2224/83101 (2013.01); H01L 2224/83204 (2013.01); H01L 2224/83851 (2013.01); H01L 2224/83862 (2013.01); H01L 2924/07811 (2013.01); H01L 2924/15788 (2013.01);
Abstract
Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mmor more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm·%) as represented by the following equation 1:slope()=(½)/  (1),