The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
May. 16, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Wen Jin, Fremont, CA (US);
Junwei Bao, Los Altos, CA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); H01L 21/66 (2006.01); G01N 23/225 (2006.01); G01N 23/04 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 23/225 (2013.01); G01N 23/04 (2013.01);
Abstract
Described is a method and system for measuring parameters of a structure on a substrate, such as a via or a through-silicon via (TSV) using an imaging X-ray metrology system. A previously-trained Support Vector Machine (SVM) model is used to extract structure parameters from the acquired structure X-ray images. Training of the Support Vector Machine (SVM) model is accomplished by using a library of actual or simulated X-ray images, or a combination of the two image types, paired with structure parameter sets.