The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Dec. 07, 2011
Applicants:

Sven Uwe Rieschl, Malans, CH;

Mohamed Elghazzali, Feldkirch, AT;

Jürgen Weichart, Balzers, LI;

Inventors:

Sven Uwe Rieschl, Malans, CH;

Mohamed Elghazzali, Feldkirch, AT;

Jürgen Weichart, Balzers, LI;

Assignee:

EVATEC AG, Trubbach, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); H01L 21/687 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); C23C 14/50 (2013.01); C23C 14/541 (2013.01); C23C 16/4585 (2013.01); C23C 16/466 (2013.01); H01L 21/2855 (2013.01); H01L 21/68721 (2013.01); H01L 21/68735 (2013.01); H01L 21/68764 (2013.01); H01L 21/76873 (2013.01);
Abstract

Apparatus () for depositing a layer () on a substrate () in a process gas comprises a chuck () comprising a first surface () for supporting the substrate (), a clamp () for securing the substrate () to the first surface () of the chuck (), an evacuatable enclosure () enclosing the chuck () and the clamp () and comprising an inlet, through which the processing gas is insertable into the enclosure (), and control apparatus (). The control apparatus () is adapted to move at least one of the chuck () and the clamp () relative to, and independently of, one another to adjust a spacing between the chuck () and the clamp () during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure () that is less than atmospheric pressure.


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