The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Jun. 23, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sebastian U. Engelmann, White Plains, NY (US);

Steve J. Holmes, Ossining, NY (US);

Qinghuang Lin, Yorktown Heights, NY (US);

Nathan P. Marchack, White Plains, NY (US);

Eugene J. O'Sullivan, Nyack, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 43/12 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01); H01L 27/22 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/31111 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

In one aspect, a method for forming a contact to a device is provided which includes the steps of: forming a conformal etch stop layer surrounding the device; forming a dielectric layer over and covering the device; forming a contact trench in the dielectric layer, wherein the contact trench is present over the device and extends down to, or beyond, the etch stop layer; exposing a contact region of the device within the contact trench by selectively removing a portion of the etch stop layer covering a top portion of the device; and filling the contact trench with a conductive material to form the contact to the device. Other methods for forming a contact to a device and also to BEOL wiring are provided as are device contact structures.


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