The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Feb. 24, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Akinobu Kakimoto, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/30 (2013.01); C23C 16/325 (2013.01); C23C 16/4554 (2013.01); C23C 16/45531 (2013.01); C23C 16/45546 (2013.01); C23C 16/52 (2013.01); H01L 21/02529 (2013.01); H01L 21/02579 (2013.01);
Abstract

A method of forming a carbon-containing silicon film includes: adsorbing a silicon source on a workpiece by supplying a silicon source gas containing at least one chlorine group into a reaction chamber accommodating the workpiece and activating the supplied silicon source gas to react the activated silicon source gas with the workpiece; and removing chlorine from the adsorbed silicon source containing chlorine by supplying an alkyl metal gas into the reaction chamber and activating the supplied alkyl metal gas to react the activated alkyl metal gas with the adsorbed silicon source. Adsorbing a silicon source and removing chlorine are sequentially repeated plural times.


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