The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Mar. 10, 2015
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for manufacturing a germanium (Ge) epitaxial layer is provided. First, a substrate is provided. Then, a first deposition process is performed to deposit a first Ge epitaxial film on the substrate. Next, a first annealing process is performed on the first Ge epitaxial film. Following that, a second deposition process is performed to directly deposit a second Ge epitaxial film on the first Ge epitaxial film. Thereafter, a second annealing process is performed on the second Ge epitaxial film, wherein the Ge epitaxial layer includes the first Ge epitaxial film and the second Ge epitaxial film, and a thickness of the Ge epitaxial layer is greater than 0.5 microns.