The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Sep. 17, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Jung Chen, Hsinchu County, TW;
Tzu-Ping Chen, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); G11C 16/14 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0408 (2013.01); G11C 16/0416 (2013.01); G11C 16/0466 (2013.01); G11C 16/10 (2013.01); H01L 21/28273 (2013.01); H01L 27/11524 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a floating gate on the substrate; a first silicon oxide layer between the floating gate and the substrate; a first tunnel oxide layer and a second tunnel oxide layer adjacent to two sides of the first silicon oxide layer; and a control gate on the floating gate. Preferably, the thickness of the first tunnel oxide layer and the second tunnel oxide layer is less than the thickness of the first silicon oxide layer.