The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jun. 22, 2015
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Andres Jaramillo-Botero, Pasadena, CA (US);
William A. Goddard, III, Pasadena, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 15/00 (2011.01); G01N 33/487 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); G01N 27/414 (2006.01); C12Q 1/68 (2006.01); G01N 27/447 (2006.01); G01N 33/18 (2006.01);
U.S. Cl.
CPC ...
G01N 33/48721 (2013.01); B82Y 15/00 (2013.01); C12Q 1/6869 (2013.01); G01N 27/4145 (2013.01); G01N 27/44704 (2013.01); G01N 33/1826 (2013.01); H01L 51/0048 (2013.01); H01L 51/055 (2013.01); H01L 51/0558 (2013.01); G01N 33/18 (2013.01);
Abstract
A detector apparatus includes a field-effect transistor configured to undergo a change in amplitude of a source-to-drain current when at least a portion of a charge-tagged molecule translocates through the nanopore. In some implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is located in a membrane. In other implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is implemented in the form of a nano-channel in a semiconductor layer.