The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Mar. 10, 2009
Applicants:

Jes Asmussen, East Lansing, MI (US);

Timothy Grotjohn, Okemos, MI (US);

Donnie Reinhard, East Lansing, MI (US);

Rahul Ramamurti, San Ramon, CA (US);

M. Kagan Yaran, Lansing, MI (US);

Thomas Schuelke, Brighton, MI (US);

Michael Becker, East Lansing, MI (US);

David King, Lansing, MI (US);

Inventors:

Jes Asmussen, East Lansing, MI (US);

Timothy Grotjohn, Okemos, MI (US);

Donnie Reinhard, East Lansing, MI (US);

Rahul Ramamurti, San Ramon, CA (US);

M. Kagan Yaran, Lansing, MI (US);

Thomas Schuelke, Brighton, MI (US);

Michael Becker, East Lansing, MI (US);

David King, Lansing, MI (US);

Assignees:

BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, East Lansing, MI (US);

Fraunhofer USA, Plymouth, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/27 (2006.01); C23C 16/458 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); C30B 29/04 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/278 (2013.01); C23C 16/274 (2013.01); C23C 16/4585 (2013.01); C23C 16/4586 (2013.01); C30B 25/105 (2013.01); C30B 25/12 (2013.01); C30B 29/04 (2013.01); H01J 37/32192 (2013.01); Y10T 428/30 (2015.01);
Abstract

The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.


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