The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 04, 2015
Applicants:
Sung-hun Lee, Yongin-si, KR;
Jong-ho Park, Seoul, KR;
Joon-hee Lee, Seongnam-si, KR;
Hee-jueng Lee, Suwon-si, KR;
Inventors:
Sung-Hun Lee, Yongin-si, KR;
Jong-Ho Park, Seoul, KR;
Joon-Hee Lee, Seongnam-si, KR;
Hee-Jueng Lee, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 29/045 (2013.01);
Abstract
A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.