The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Oct. 09, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tsung-Che Tsai, Hsinchu, TW;

Jam-Wem Lee, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 21/822 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 27/06 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/822 (2013.01); H01L 27/0688 (2013.01); H01L 27/0814 (2013.01); H01L 29/0649 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/8613 (2013.01); H02H 9/046 (2013.01); H01L 29/87 (2013.01);
Abstract

A diode string having a plurality of diodes for ESD protection of a CMOS IC device comprises a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate, and remaining diodes in the diode string. The remaining diodes are formed on a top layer placed on top of the bottom layer. The diode string further comprises a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the top layer to form a three dimensional (3D) structure of the diode string.


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