The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2016

Filed:

Dec. 17, 2012
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Robert C. Frye, Piscataway, NJ (US);

Kai Liu, Phoenix, AZ (US);

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/42 (2006.01); H01L 27/01 (2006.01); H01P 5/10 (2006.01); H03H 7/48 (2006.01); H01L 21/70 (2006.01); H05K 1/02 (2006.01); H03H 5/00 (2006.01); H05K 1/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/01 (2013.01); H01L 21/70 (2013.01); H01P 5/10 (2013.01); H03H 7/48 (2013.01); H05K 1/025 (2013.01); H05K 1/0233 (2013.01); H05K 1/0239 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); H05K 1/0243 (2013.01); H05K 1/165 (2013.01); H05K 2201/09245 (2013.01); Y10T 29/49155 (2015.01);
Abstract

A semiconductor device has a substrate and RF coupler formed over the substrate. The RF coupler has a first conductive trace with a first end coupled to a first terminal of the semiconductor device, and a second conductive trace with a first end coupled to a second terminal of the semiconductor device. The first conductive trace is placed in proximity to a first portion of the second conductive trace. An integrated passive device is formed over the substrate. A second portion of the second conductive trace operates as a circuit component of the integrated passive device. The integrated passive device can be a balun or low-pass filter. The RF coupler also has a first capacitor coupled to the first terminal of the semiconductor device, and second capacitor coupled to a third terminal of the semiconductor device for higher directivity. The second conductive trace is wound to exhibit an inductive property.


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