The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 21, 2012
Applicant:
Seung Wook Lee, Gyeongbuk, KR;
Inventor:
Seung Wook Lee, Gyeongbuk, KR;
Assignee:
LG SILTRON INC., Gumi-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/67 (2006.01); G01N 1/32 (2006.01); G01N 35/00 (2006.01); G01N 1/38 (2006.01); G01N 1/40 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/67 (2013.01); H01L 21/6708 (2013.01); H01L 21/67051 (2013.01); G01N 1/32 (2013.01); G01N 1/4044 (2013.01); G01N 35/0099 (2013.01); G01N 2001/383 (2013.01);
Abstract
Provided are an apparatus for measuring impurities on a wafer and a method of measuring impurities on a wafer. The apparatus includes: a wafer aligning device for aligning a wafer; a loading robot for moving and loading the aligned wafer; a rotation stage for rotating the loaded wafer; a scan robot for holding a natural oxide layer etching solution for the wafer and a metallic impurity recovery solution; and a container for receiving a predetermined etching solution and a recovery solution, wherein the scan robot removes an oxide layer on an edge region of the wafer.