The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Oct. 30, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Paul Raymond Besser, Sunnyvale, CA (US);
William Worthington Crew, Jr., North Plains, OR (US);
Sanjay Gopinath, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/26513 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01);
Abstract
Methods of lightly implanting platinum, iridium, osmium, erbium, ytterbium, dysprosium, and gadolinium in semiconductor material in shallow depths by plasma-immersion ion implantation (PIII) and/or pulsed PIII are provided herein. Methods include depositing a liner layer prior to masking and implanting features to form n-type and p-type semiconductors and implanting materials through the liner layer. Methods are suitable for integration schemes involving fabrication of fin-type field effect transistors (FinFETs).