The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
May. 15, 2012
Applicants:
Adrian Stefan Avramescu, Regensburg, DE;
Ines Pietzonka, Donaustauf, DE;
Dimitri Dini, Munich, DE;
Inventors:
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01S 5/22 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02576 (2013.01); H01L 21/02609 (2013.01); H01L 21/02647 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract
An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.