The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Sep. 14, 2015
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventor:
Guowei Zhang, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7836 (2013.01); H01L 21/823814 (2013.01); H01L 27/088 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01);
Abstract
A method of forming a device is disclosed. A substrate having a high gain (HG) device region for a HG transistor is provided. A HG gate is formed on the substrate in the HG device region. The HG gate includes sidewall spacers on its sidewalls. Heavily doped regions are formed adjacent to the HG gate. Inner edges of the heavily doped regions are aligned with about outer edges of the sidewall spacers of the HG gate. The heavily doped regions serve as HG source/drain (S/D) regions of the HG gate. The HG S/D regions do not include lightly doped drain (LDD) regions or halo regions.