The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Sep. 14, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kuo-Chih Lai, Tainan, TW;
Nien-Ting HO, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Ching-Yun Chang, Yunlin County, TW;
Yen-Chen Chen, Tainan, TW;
Yang-Ju Lu, Changhua County, TW;
Shih-Min Chou, Tainan, TW;
Yun-Tzu Chang, Kaohsiung, TW;
Hsiang-Chieh Yen, Penghu County, TW;
Min-Chuan Tsai, New Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28088 (2013.01); H01L 29/401 (2013.01); H01L 29/42376 (2013.01);
Abstract
A metal gate forming process includes the following steps. A first metal layer is formed on a substrate by at least a first step followed by a second step, wherein the processing power of the second step is higher than the processing power of the first step.