The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

May. 18, 2012
Applicants:

Chen-kuo Chiang, Tainan, TW;

Chun-hsien Lin, Tainan, TW;

Inventors:

Chen-Kuo Chiang, Tainan, TW;

Chun-Hsien Lin, Tainan, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer from top to bottom, and the energy bandgap of the second metal oxide layer is lower than the energy bandgap of the first metal oxide layer and that of the third metal oxide layer. The semiconductor structure includes a metal oxide layer on a substrate, wherein the energy bandgap of the metal oxide layer changes along a direction perpendicular to the surface of the substrate. The present invention also provides a semiconductor process forming said semiconductor structure.


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