The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Dec. 19, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Guo-Chiang Chi, Zhubei, TW;
Chia-Der Chang, Hsinchu, TW;
Chih-Hung Lu, Zhudong Township, TW;
Wei-Chin Chen, Keelung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/28079 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/32135 (2013.01); H01L 29/0642 (2013.01); H01L 29/495 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate electrode formed on the substrate. The semiconductor device structure also includes a first contact structure including a first portion and a second portion. The first portion of the first contact structure is formed in the gate electrode, and the second portion is formed on the first portion.