The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jun. 08, 2015
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Jeffrey R. LaRoche, Austin, TX (US);
John P. Bettencourt, Danvers, MA (US);
Thomas E. Kazior, Sudbury, MA (US);
Kelly P. Ip, Lowell, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6683 (2013.01);
Abstract
A semiconductor structure having a semiconductor layer having an active device therein. A dielectric structure is disposed over the semiconductor layer, such dielectric structure having open ended trench therein. An electrical interconnect level is disposed in the trench and electrically connected to the active device. A plurality of stacked metal layers is disposed in the trench. The stacked metal layers have disposed on bottom and sidewalls thereof conductive barrier metal layers.