The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Apr. 24, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

XuSheng Bao, Singapore, SG;

KwokKeung Szeto, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/5389 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 23/49816 (2013.01); H01L 23/522 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14134 (2013.01); H01L 2224/14135 (2013.01); H01L 2224/244 (2013.01); H01L 2224/24147 (2013.01); H01L 2224/821 (2013.01); H01L 2224/8236 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a first semiconductor die. A first interconnect structure, such as a conductive pillar including a bump formed over the conductive pillar, and second interconnect structure are formed in a peripheral region of the first semiconductor die. A second semiconductor die is disposed over the first semiconductor die between the first interconnect structure and the second interconnect structure. A height of the second semiconductor die is less than a height of the first interconnect structure. A footprint of the second semiconductor die is smaller than a central region of the first semiconductor die. An encapsulant is deposited over the first semiconductor die and second semiconductor die. Alternatively, the second semiconductor die is disposed over a semiconductor package including a plurality of interconnect structures. External connectivity from the single side fo-WLCSP is performed without the use of conductive vias to provide a high throughput and device reliability.


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